Technical parameters/rated power: 2.5 W
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.05 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5.3A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7406PBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF7406PBF 晶体管, MOSFET, P沟道, 5.2 A, -30 V, 45 mohm, -10 V, -1 V
|
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IRF7406TRPBF
|
Infineon | 功能相似 | SOIC-8 |
HEXFET® P 通道功率 MOSFET，Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 P 通道设备，用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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