Technical parameters/dissipated power (Max): 3850 mW
Technical parameters/power supply voltage (Max): 5.5 V
Encapsulation parameters/Encapsulation: Module
External dimensions/packaging: Module
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HMC-ALH444
|
ADI | 功能相似 | 压铸 |
ANALOG DEVICES HMC-ALH444 芯片, 射频放大器, 17DB, 12GHZ, 5V, 压铸
|
||
TGA2513
|
TriQuint | 功能相似 | DIE (2.09 mm x 1.35 mm) / Wafer |
RF Amplifier 2-23GHz LNA Gain Block
|
||
TGA2513
|
Qorvo | 功能相似 | DIE (2.09 mm x 1.35 mm) / Wafer |
RF Amplifier 2-23GHz LNA Gain Block
|
||
|
|
Qorvo | 功能相似 |
射频放大器 2-20 GHz LNA LNA / Gain Block
|
|||
|
|
Qorvo | 功能相似 |
射频放大器 2-18GHz LNA / Gain Block w/AGC
|
|||
TGA2525
|
TriQuint | 功能相似 |
射频放大器 2-18GHz LNA / Gain Block w/AGC
|
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