Technical parameters/number of channels: 1
Technical parameters/dissipated power: 1375 mW
Technical parameters/Input compensation drift: 500 nV/K
Technical parameters/conversion rate: 2.50 V/μs
Technical parameters/gain bandwidth product: 1.8 MHz
Technical parameters/dissipated power (Max): 1375 mW
Technical parameters/Common Mode Rejection Ratio (Min): 90 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 20
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube, Rail
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
5962-9088203Q2A
|
TI | 类似代替 | SOIC |
高级LinCMOSE低噪声精密运算放大器 Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
|
||
TLC2201AMFKB
|
TI | 完全替代 | SOIC |
高级LinCMOSE低噪声精密运算放大器 Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
|
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