Technical parameters/polarity: NPN+PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 5V
Technical parameters/rated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSBC123JPDXV6T1G
|
ON Semiconductor | 功能相似 | SOT-563-6 |
NSBC123JPDXV6T1G NPN+PNP复合带阻尼三极管 -50V/50V -100mA/100mA HEF=80~140 R1=2.2KΩ R2=47KΩ 500mW/0.5W SOT-563 标记3S6 开关电路 逆变器 接口电路 驱动电路
|
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PEMD10,115
|
NXP | 功能相似 | SOT-666-6 |
NXP ### 数字晶体管,NXP 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管,包含一个或两个集成电阻器。 单一系列输入电阻器,或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
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