Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 120 @100mA, 1V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/packaging: SOT-323
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJX1182OTF
|
Fairchild | 功能相似 | SOT-323-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Epitaxial Sil
|
||
FJX1182YTF
|
ON Semiconductor | 功能相似 | SOT-323 |
Trans GP BJT PNP 30V 0.5A 3Pin SOT-323 T/R
|
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