Technical parameters/dissipated power: 0.4 W
Technical parameters/breakdown voltage (collector emitter): 35 V
Technical parameters/rated power (Max): 400 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 400 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-46
External dimensions/packaging: TO-46
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2946A
|
Microsemi | 完全替代 | TO-46-3 |
PNP硅小信号晶体管 PNP SILICON SMALL SIGNAL TRANSISTOR
|
||
JAN2N2946A
|
Microsemi | 功能相似 | TO-46 |
Trans GP BJT PNP 35V 0.1A 3-Pin TO-46
|
||
JANTXV2N2946A
|
Semicoa Semiconductor | 完全替代 | TO-46 |
PNP硅小信号晶体管 PNP SILICON SMALL SIGNAL TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review