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Model FQA13N80_F109
Description QFET® N Channel MOSFET, 11A to 30A, Fairchild Semiconductor's new QFET ® Planar MOSFETs use advanced patented technology to provide optimal performance for a wide range of applications, including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDP), lighting ballasts, and motion control. They reduce on state losses by lowering the on resistance (RDS (on)), and reduce switching losses by lowering the gate charge (Qg) and output capacitance (Coss). By utilizing advanced QFET technology ® Fairchild can provide higher quality factor (FOM) than competing planar MOSFET devices in terms of process technology.
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Brand: Fairchild
Packaging TO-3-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
24.27  yuan 24.27yuan
5+:
$ 28.3947
50+:
$ 27.1813
200+:
$ 26.5017
500+:
$ 26.3319
1000+:
$ 26.1620
2500+:
$ 25.9678
5000+:
$ 25.8465
7500+:
$ 25.7251
Quantity
5+
50+
200+
500+
1000+
Price
$28.3947
$27.1813
$26.5017
$26.3319
$26.1620
Price $ 28.3947 $ 27.1813 $ 26.5017 $ 26.3319 $ 26.1620
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2869) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.58 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 300 W

Technical parameters/threshold voltage: 5 V

Technical parameters/drain source voltage (Vds): 800 V

Technical parameters/Continuous drain current (Ids): 12.6A

Technical parameters/rise time: 150 ns

Technical parameters/Input capacitance (Ciss): 3500pF @25V(Vds)

Technical parameters/rated power (Max): 300 W

Technical parameters/descent time: 110 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 300W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-3-3

External dimensions/length: 15.8 mm

External dimensions/width: 5 mm

External dimensions/height: 18.9 mm

External dimensions/packaging: TO-3-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQA13N80 FQA13N80 ON Semiconductor 类似代替 TO-3-3
800V N沟道MOSFET 800V N-Channel MOSFET
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