Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.1W (Ta), 42W (Tc)
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/Continuous drain current (Ids): 28A
Technical parameters/rise time: 30 ns
Technical parameters/Input capacitance (Ciss): 2510pF @13V(Vds)
Technical parameters/descent time: 9.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 2.1W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: Direct-FET
External dimensions/packaging: Direct-FET
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: MultiPhase SyncFET
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6892STR1PBF
|
International Rectifier | 类似代替 | Surface Mount |
Direct-FET N-CH 25V 28A
|
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