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Technical parameters/drain source voltage (Vds): 500 V
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Catalog: MOS(Field Effect Transistor
Other/leakage source voltage (Vdss): 500V
Other/continuous drain current (Id) (at 25 ° C): 20A(Tc)
Other/gate source threshold voltage: 4V @ 250uA
Other/leakage source conduction resistance: 340mΩ @ 10A,10V
Other/maximum power dissipation (Ta=25 ° C): 110W(Tc)
Other/Type: Nchannel
Other/Product Code: C271454
Other/Packaging Specifications: TO-3P
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