Technical parameters/clamp voltage: 13.6 V
Technical parameters/Maximum reverse voltage (Vrrm): 8V
Technical parameters/test current: 1 mA
Technical parameters/maximum reverse breakdown voltage: 10.23 V
Technical parameters/minimum reverse breakdown voltage: 8.89 V
Technical parameters/maximum reverse leakage current (Ir): 10uA
Encapsulation parameters/Encapsulation: R-6
External dimensions/packaging: R-6
Other/Minimum Packaging: 1800
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Panjit | 类似代替 | P-600 |
TVS Diode 3000W Axial Uni 10%
|
||
|
|
Won-Top Electronics | 类似代替 |
瞬态电压抑制二极管 Transient Voltage Suppression Diodes
|
|||
3KP8.0A
|
Littelfuse | 类似代替 | P-600 |
瞬态电压抑制二极管 Transient Voltage Suppression Diodes
|
||
3KP8.0A
|
MDE Semiconductor | 类似代替 |
瞬态电压抑制二极管 Transient Voltage Suppression Diodes
|
|||
3KP8.0A
|
DB Lectro | 类似代替 |
瞬态电压抑制二极管 Transient Voltage Suppression Diodes
|
|||
5KP8.0A
|
JXND | 功能相似 | R-6 |
Diode: transil; 5kW; 8V; unidirectional; 8x7,5mm
|
||
|
|
Meritek | 功能相似 |
Diode: transil; 5kW; 8V; unidirectional; 8x7,5mm
|
|||
5KP8.0A
|
Littelfuse | 功能相似 | P-600 |
Diode: transil; 5kW; 8V; unidirectional; 8x7,5mm
|
||
5KP8.0A
|
Diotec Semiconductor | 功能相似 |
Diode: transil; 5kW; 8V; unidirectional; 8x7,5mm
|
|||
|
|
LiteOn | 功能相似 |
Diode: transil; 5kW; 8V; unidirectional; 8x7,5mm
|
|||
5KP8.0A
|
Surge Components | 功能相似 |
Diode: transil; 5kW; 8V; unidirectional; 8x7,5mm
|
|||
5KP8.0A
|
Prisemi | 功能相似 | R-6 |
Diode: transil; 5kW; 8V; unidirectional; 8x7,5mm
|
||
5KP8.0A-AP
|
Micro Commercial Components | 功能相似 |
8V 5000W
|
|||
5KP8.0A-E3/54
|
VISHAY | 功能相似 | P600 |
TRANSZORB® 瞬态电压抑制器轴向单向 5000W,Vishay Semiconductor P600 封装,带玻璃钝化接头 极佳的夹持能力 非常快的响应时间 低增量抗浪涌性 符合汽车 AEC-Q101 规格 瞬态电压抑制器,Vishay Semiconductor
|
||
5KP8.0A-G
|
Comchip Technology | 功能相似 | R-6-2 |
ESD 抑制器/TVS 二极管 5000W VRWM=8.0V,Uni
|
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