Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): -120V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): -120V
Other/Collector Continuous Output Current (IC): −100mA/-0.1A
Other/DC current gain hFEDC Current Gain (hFE): 400 to 800
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: −150mV/-0.15V
Other/dissipated power PcPoWer Dissipation: 150mW/0.15W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA1566JIETL-E
|
Renesas Electronics | 功能相似 | MPAK |
PNP硅外延 Silicon PNP Epitaxial
|
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