Technical parameters/frequency: 12 GHz
Technical parameters/rated current: 70 mA
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 mW
Technical parameters/drain source voltage (Vds): 4 V
Technical parameters/leakage source breakdown voltage: 2.00 V
Technical parameters/Continuous drain current (Ids): 10.0 mA
Technical parameters/gain: 12 dB
Technical parameters/test current: 10 mA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 125 mW
Technical parameters/rated voltage: 4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-323-4
External dimensions/height: 0.59 mm
External dimensions/packaging: SOT-323-4
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NE3503M04
|
NEC | 功能相似 | SOT-343 |
Trans FET N-CH 4V 70mA HFET 4Pin Thin-Type Super Mini-Mold
|
||
NE3503M04
|
California Eastern Laboratories | 功能相似 |
Trans FET N-CH 4V 70mA HFET 4Pin Thin-Type Super Mini-Mold
|
|||
NE3503M04-T2-A
|
NEC | 完全替代 | FTSMM-4 |
Trans FET N-CH 4V 70mA HFET 4Pin Case M04 T/R
|
||
NE3503M04-T2-A
|
California Eastern Laboratories | 完全替代 | SOT-323-4 |
Trans FET N-CH 4V 70mA HFET 4Pin Case M04 T/R
|
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