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Model NE3509M04-A
Description Radio frequency junction gate field-effect transistor (RF JFET) transistor L to S Band Lo Noise Amplifier N-Ch HJFET
Product QR code
Brand: California Eastern Laboratories
Packaging SOT-343
Delivery time
Packaging method Tape
Standard packaging quantity 1
6.31  yuan 6.31yuan
10+:
$ 7.5696
100+:
$ 7.1911
500+:
$ 6.9388
1000+:
$ 6.9262
2000+:
$ 6.8757
5000+:
$ 6.8126
7500+:
$ 6.7622
10000+:
$ 6.7369
Quantity
10+
100+
500+
1000+
2000+
Price
$7.5696
$7.1911
$6.9388
$6.9262
$6.8757
Price $ 7.5696 $ 7.1911 $ 6.9388 $ 6.9262 $ 6.8757
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7360) Minimum order quantity(10)
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Technical parameters/frequency: 2 GHz

Technical parameters/rated current: 60 mA

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 150 mW

Technical parameters/leakage source breakdown voltage: 2.00 V

Technical parameters/Continuous drain current (Ids): 10.0 mA

Technical parameters/output power: 11 dBm

Technical parameters/gain: 17.5 dB

Technical parameters/test current: 10 mA

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 150 mW

Technical parameters/rated voltage: 4 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-343

External dimensions/height: 0.59 mm

External dimensions/packaging: SOT-343

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NE3509M04-T2-A NE3509M04-T2-A Renesas Electronics 类似代替 SOT-23
NE3509 系列 4 V 2 GHz N 沟道 HJ-FET 低噪声 放大器 - TSMM-4

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