Technical parameters/rated power: 0.15 W
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.15 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 50mA
Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 5V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-523
External dimensions/packaging: SOT-523
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA114EE
|
CJ | 功能相似 | SOT-523 |
DTA114EE 带阻尼PNP三极管 -50V -50mA 0.15W/150mW SOT-523/EMT3 标记14 开关电路,逆变器,接口电路,驱动电路
|
||
DTA114EE
|
ROHM Semiconductor | 功能相似 | EMT-3 |
DTA114EE 带阻尼PNP三极管 -50V -50mA 0.15W/150mW SOT-523/EMT3 标记14 开关电路,逆变器,接口电路,驱动电路
|
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