Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTC123JKA
|
ROHM Semiconductor | 功能相似 | SMT |
百毫安/ 50V数字晶体管（带内置式电阻器） 100mA / 50V Digital transistors (with built-in resistors)
|
||
DTC123JKAT146
|
ROHM Semiconductor | 类似代替 | SOT-23-3 |
ROHM DTC123JKAT146 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率, SC-59
|
||
MUN2231T1
|
ON Semiconductor | 功能相似 | SOT-23-3 |
NPN硅偏置电阻晶体管 NPN SILICON BIAS RESISTOR TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review