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Model FDD6637_F085
Description PowerTrench® P Channel MOSFET, Fairchild Semiconductor PowerTrench ® MOSFET is an optimized power switch that can improve system efficiency and power density. They combine small gate charges (Qg), small reverse recovery charges (Qrr), and soft reverse recovery main diodes, which help to quickly switch synchronous rectification in AC/DC power supplies. The latest PowerTrench ® MOSFET adopts a shielded gate structure, which can provide charge balance. By utilizing this advanced technology, the FOM (quality factor) of these devices is significantly lower than the previous FOM. PowerTrench ® The soft body diode performance of MOSFETs can be achieved without the need for buffer circuits or the replacement of MOSFETs with higher rated voltages. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
4.16  yuan 4.16yuan
5+:
$ 5.6120
25+:
$ 5.1963
50+:
$ 4.9053
100+:
$ 4.7806
500+:
$ 4.6974
2500+:
$ 4.5935
5000+:
$ 4.5519
10000+:
$ 4.4896
Quantity
5+
25+
50+
100+
500+
Price
$5.6120
$5.1963
$4.9053
$4.7806
$4.6974
Price $ 5.6120 $ 5.1963 $ 4.9053 $ 4.7806 $ 4.6974
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7507) Minimum order quantity(5)
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Technical parameters/polarity: P-CH

Technical parameters/dissipated power: 3.1 W

Technical parameters/drain source voltage (Vds): 35 V

Technical parameters/Continuous drain current (Ids): 21A

Technical parameters/rise time: 10 ns

Technical parameters/Input capacitance (Ciss): 2370pF @20V(Vds)

Technical parameters/rated power (Max): 1.3 W

Technical parameters/descent time: 36 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 68W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDD6637 FDD6637 Fairchild 类似代替 TO-252-3
FAIRCHILD SEMICONDUCTOR FDD6637 晶体管, MOSFET, P沟道, -13 A, -35 V, 9.7 mohm, -10 V, -1.6 V
PDF
FDD6637 FDD6637 ON Semiconductor 类似代替 TO-252-3
FAIRCHILD SEMICONDUCTOR FDD6637 晶体管, MOSFET, P沟道, -13 A, -35 V, 9.7 mohm, -10 V, -1.6 V
PDF

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