Chip AI consultant
Technical parameters/rise/fall time: 20ns, 15ns
Technical parameters/number of output interfaces: 2
Technical parameters/output current: 4 A
Technical parameters/dissipated power: 350 mW
Technical parameters/rise time: 20 ns
Technical parameters/descent time: 15 ns
Technical parameters/descent time (Max): 40 ns
Technical parameters/rise time (Max): 40 ns
Technical parameters/operating temperature (Max): 105 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 350 mW
Technical parameters/power supply voltage: 4V ~ 15V
Technical parameters/power supply voltage (Max): 15 V
Technical parameters/power supply voltage (Min): 4 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PDIP-8
External dimensions/packaging: PDIP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Unitrode | 类似代替 |
双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers
|
|||
UCC27325P
|
TI | 类似代替 | PDIP-8 |
双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers
|
||
UCC27425P
|
TI | 完全替代 | PDIP-8 |
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
|
||
UCC37325P
|
TI | 类似代替 | PDIP-8 |
TEXAS INSTRUMENTS UCC37325P 双路驱动器, MOSFET, 低压侧, 4V-15V电源, 4A输出, 35ns延迟, DIP-8
|
||
UCC37325P
|
Unitrode | 类似代替 |
TEXAS INSTRUMENTS UCC37325P 双路驱动器, MOSFET, 低压侧, 4V-15V电源, 4A输出, 35ns延迟, DIP-8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review