Technical parameters/rated current: 7.50 A
Technical parameters/drain source resistance: 17.0 mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/input capacitance: 1.56 nF
Technical parameters/gate charge: 29.0 nC
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/rise time: 14.0 ns
Technical parameters/Input capacitance (Ciss): 900pF @20V(Vds)
Technical parameters/rated power (Max): 900 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
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