Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 187 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 15 @5mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 15 @5mA, 10V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-363-6
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5232DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5232DW1T1G 晶体管 双极预偏置/数字, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-363 新
|
||
PDTC123EU,115
|
NXP | 功能相似 | SOT-323-3 |
NXP PDTC123EU,115 NPN 数字晶体管, 100 mA, Vce=50 V, 2.2 kΩ, 电阻比:1, 3引脚 UMT封装
|
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