Technical parameters/number of pins: 3
Technical parameters/forward voltage: 1.25 V
Technical parameters/dissipated power: 350 mW
Technical parameters/thermal resistance: 430K/W (RθJA)
Technical parameters/reverse recovery time: 6 ns
Technical parameters/forward current: 250 mA
Technical parameters/Maximum forward surge current (Ifsm): 2 A
Technical parameters/forward voltage (Max): 1.25 V
Technical parameters/forward current (Max): 0.25 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/working junction temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.1 mm
External dimensions/width: 1.43 mm
External dimensions/height: 0.975 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Each
Other/Manufacturing Applications: Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAW56LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BAW56LT1G.. 二极管 小信号, 双共阳极, 70 V, 200 mA, 1.25 V, 6 ns, 500 mA
|
||
BAW56LT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BAW56LT3G 二极管 小信号, AEC-Q101, 双共阳极, 70 V, 200 mA, 1.25 kV, 6 ns, 4 A 新
|
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