Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/clock frequency: 3.00MHz (max)
Technical parameters/access time: 200 ns
Technical parameters/memory capacity: 4000 B
Technical parameters/access time (Max): 200 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 2.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 2.5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.25 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃ (TA)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Microchip | 完全替代 | SOIC-8 |
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M93C66-WMN6T
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16Kbit的， 8Kbit ， 4k位， 2Kbit和的1K位（ 8位或16位宽） MICROWIRE串行EEPROM的访问 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM
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