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Model FQPF7N65C_F105
Description MOSFET N-CH 650V 7A TO-220F
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Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7323) Minimum order quantity(1)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 1.4 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 52 W

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/leakage source breakdown voltage: 650 V

Technical parameters/Continuous drain current (Ids): 7A

Technical parameters/rise time: 50 ns

Technical parameters/Input capacitance (Ciss): 1245pF @25V(Vds)

Technical parameters/descent time: 55 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 52W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.67 mm

External dimensions/width: 4.7 mm

External dimensions/height: 16.3 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQPF7N65C FQPF7N65C Fairchild 类似代替 TO-220-3
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQPF7N65C, 7 A, Vds=650 V, 3引脚 TO-220F封装
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