Technical parameters/dissipated power: 30 W
Technical parameters/drain source voltage (Vds): 60 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK2927
|
HITACHI | 功能相似 | TO-220 |
硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
|
||
2SK2927
|
Renesas Electronics | 功能相似 | TO-220 |
硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
|
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