Technical parameters/frequency: 50 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.3 W
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 25 @30mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 25 @1mA, 10V
Technical parameters/rated power (Max): 1.3 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PXTA92,115
|
NXP | 功能相似 | SOT-89-3 |
单晶体管 双极, PNP, -300 V, 50 MHz, 1.3 W, -100 mA, 25 hFE
|
||
PZTA92T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR PZTA92T1G. 双极性晶体管, PNP, -50mA, -300V, SOT223
|
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