Technical parameters/frequency: 150 MHz
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 400
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/length: 4.5 mm
External dimensions/width: 2.5 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Electrical equipment, Voltage regulators, Relay drivers, Lamp drivers
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SB1122S-TD-E
|
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NPN 晶体管,最大 1A,ON Semiconductor ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声,双匹配和复杂的双极晶体管
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