Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 6.3A
Technical parameters/rise time: 100 ns
Technical parameters/descent time: 95 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SO-8
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RF1K49156
|
Fairchild | 类似代替 | SOP |
6.3A , 30V , 0.030欧姆,逻辑电平,单N沟道LittleFET功率MOSFET 6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET
|
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