Technical parameters/rated voltage (DC): 47.0 V
Technical parameters/tolerances: ±6 %
Technical parameters/rated power: 500 mW
Technical parameters/output current: ≤50.0 mA
Technical parameters/dissipated power: 410 mW
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 47 V
Technical parameters/forward voltage (Max): 0.9 V
Technical parameters/rated power (Max): 410 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-123-2
External dimensions/length: 2.85 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1.25 mm
External dimensions/packaging: SOD-123-2
Physical parameters/operating temperature: -65℃ ~ 150℃
Physical parameters/temperature coefficient: 46.9 mV/℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZT52C47
|
DC Components | 功能相似 |
500mW，BZT52C 系列，Taiwan Semiconductor 小信号 500mW 齐纳二极管 电压容差为 5% 表面安装外壳：SOD-123F ### 齐纳二极管，Taiwan Semiconductor
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|
|
LGE | 功能相似 | SOD-123 |
500mW，BZT52C 系列，Taiwan Semiconductor 小信号 500mW 齐纳二极管 电压容差为 5% 表面安装外壳：SOD-123F ### 齐纳二极管，Taiwan Semiconductor
|
||
BZT52C47
|
Vishay Semiconductor | 功能相似 | SOD-123 |
500mW，BZT52C 系列，Taiwan Semiconductor 小信号 500mW 齐纳二极管 电压容差为 5% 表面安装外壳：SOD-123F ### 齐纳二极管，Taiwan Semiconductor
|
||
|
BZT52C47
|
MDD | 功能相似 | SOD-123 |
500mW，BZT52C 系列，Taiwan Semiconductor 小信号 500mW 齐纳二极管 电压容差为 5% 表面安装外壳：SOD-123F ### 齐纳二极管，Taiwan Semiconductor
|
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