Technical parameters/rated voltage (DC): -260 V
Technical parameters/rated current: -15.0 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150000 mW
Technical parameters/breakdown voltage (collector emitter): 260 V
Technical parameters/maximum allowable collector current: 15A
Technical parameters/minimum current amplification factor (hFE): 75 @3A, 5V
Technical parameters/rated power (Max): 150 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 16.26 mm
External dimensions/width: 5.3 mm
External dimensions/height: 21.08 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJW3281AG
|
ON Semiconductor | 功能相似 | TO-247-3 |
互补NPN -PNP硅功率双极晶体管 Complementary NPN-PNP Silicon Power Bipolar Transistors
|
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