Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 230 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 160 @5mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 160
Technical parameters/rated power (Max): 230 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-553-5
External dimensions/length: 1.7 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.6 mm
External dimensions/packaging: SOT-553-5
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA144WM3T5G
|
ON Semiconductor | 功能相似 | SOT-723-3 |
数字晶体管（ BRT ） PNP硅表面贴装晶体管与单片偏置电阻网络 Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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||
EMA6DXV5T1
|
ON Semiconductor | 完全替代 | SOT-553 |
双共发射极偏置电阻晶体管PNP硅表面贴装晶体管与单片偏置电阻网络 Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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