Technical parameters/reverse recovery time: 2000 ns
Technical parameters/forward current (Max): 5 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: G-4
External dimensions/packaging: G-4
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
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Sensitron Semiconductor | 完全替代 | AXIAL DIODE |
Rectifier Diode, Avalanche, 1 Phase, 1Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, G4, 2Pin
|
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|
|
Voltage Multipliers | 完全替代 |
Rectifier Diode, Avalanche, 1 Phase, 1Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, G4, 2Pin
|
|||
|
|
Microsemi | 完全替代 | * |
Rectifier Diode, Avalanche, 1 Phase, 1Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, G4, 2Pin
|
||
1N5552
|
Solid State Devices | 完全替代 |
Rectifier Diode, Avalanche, 1 Phase, 1Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, G4, 2Pin
|
|||
1N5552
|
Good-Ark Electronics | 完全替代 | G-4 |
Rectifier Diode, Avalanche, 1 Phase, 1Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, G4, 2Pin
|
||
|
|
ON Semiconductor | 完全替代 |
Diode Switching 600V 5A 2Pin Case G-4
|
|||
JAN1N5552
|
Microsemi | 完全替代 | B, Axial |
Diode Switching 600V 5A 2Pin Case G-4
|
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