Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 0.25 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 100 mA
Technical parameters/rise time: 55 ns
Technical parameters/Input capacitance (Ciss): 7.5pF @10V(Vds)
Technical parameters/descent time: 130 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.5 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
3LP01C-TB-E
|
ON Semiconductor | 功能相似 | SOT-23-3 |
MOSFET P-CH 30V 100mA CP
|
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