Technical parameters/forward voltage: 1.05 V
Technical parameters/Maximum reverse voltage (Vrrm): 800V
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 80 A
Technical parameters/forward voltage (Max): 1.05V @3A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: KBPM
External dimensions/length: 15.24 mm
External dimensions/width: 5.08 mm
External dimensions/height: 11.68 mm
External dimensions/packaging: KBPM
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
3KBP08M-E4/45
|
VISHAY | 类似代替 | KBPM |
DIODE BRIDGE 3A 800V KBPM
|
||
3KBP08M-E4/72
|
Vishay Semiconductor | 完全替代 | SIP-4 |
BRIDGE RECT 1PHASE 800V 3A KBPM
|
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