Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 600 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 140A
Technical parameters/rise time: 50 ns
Technical parameters/Input capacitance (Ciss): 4700pF @25V(Vds)
Technical parameters/rated power (Max): 600 W
Technical parameters/descent time: 26 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 600W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-268-3
External dimensions/packaging: TO-268-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTQ140N10P
|
IXYS Semiconductor | 功能相似 | TO-3-3 |
IXTQ 系列 单 N 沟道 100 V 11 mOhm 600 W 功率 Mosfet - TO-3P
|
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