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Description IXTT Series single channel N-channel 100 V 11 mOhm 600 W power Mosfet - TO-268
Product QR code
Packaging TO-268-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
45.56  yuan 45.56yuan
1+:
$ 55.5771
10+:
$ 52.3883
100+:
$ 50.0194
250+:
$ 49.6550
500+:
$ 49.2905
1000+:
$ 48.8805
2500+:
$ 48.5161
5000+:
$ 48.2883
Quantity
1+
10+
100+
250+
500+
Price
$55.5771
$52.3883
$50.0194
$49.6550
$49.2905
Price $ 55.5771 $ 52.3883 $ 50.0194 $ 49.6550 $ 49.2905
Start batch production 1+ 10+ 100+ 250+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(8687) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 600 W

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Continuous drain current (Ids): 140A

Technical parameters/rise time: 50 ns

Technical parameters/Input capacitance (Ciss): 4700pF @25V(Vds)

Technical parameters/rated power (Max): 600 W

Technical parameters/descent time: 26 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 600W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-268-3

External dimensions/packaging: TO-268-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXTQ140N10P IXTQ140N10P IXYS Semiconductor 功能相似 TO-3-3
IXTQ 系列 单 N 沟道 100 V 11 mOhm 600 W 功率 Mosfet - TO-3P
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