Technical parameters/contact type: SPST-NO
Technical parameters/load current: 150 mA
Technical parameters/input current: 50 mA
Technical parameters/dissipated power: 550 mW
Technical parameters/resistance: 20.0 Ω
Technical parameters/isolation voltage: 5.3 kV
Technical parameters/forward current: 900 µA
Technical parameters/input voltage (Max): 1.45 V
Technical parameters/output voltage (Max): 350 V
Technical parameters/output current (Max): 0.25 A
Technical parameters/input current (Min): 50 mA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 550 mW
Technical parameters/input voltage: 1.25 VDC
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: DIP-6
External dimensions/length: 8.7 mm
External dimensions/width: 6.5 mm
External dimensions/height: 3.81 mm
External dimensions/packaging: DIP-6
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Communications & Networking, Industrial, Sensing & Instrumentation
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AQV210EH
|
Matsushita | 功能相似 | DIP-6 |
PANASONIC ELECTRIC WORKS AQV210EH 继电器, MOSFET, 350 V, 130 mA, 35R, SPST常开
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||
AQV252G
|
Panasonic | 功能相似 | DIP-6 |
PANASONIC ELECTRIC WORKS AQV252G 光电继电器, PHOTOMOS, 60V, 2.5A
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|
KEMET Corporation | 功能相似 |
PANASONIC ELECTRIC WORKS AQV252G 光电继电器, PHOTOMOS, 60V, 2.5A
|
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AQV254H
|
NAIS | 功能相似 | DIP-6 |
PANASONIC ELECTRIC WORKS AQV254H 继电器, MOSFET, 400 V, 150 mA, 16R, SPST常开
|
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