Technical parameters/drain source resistance: 15.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/drain source voltage (Vds): -30.0 V
Technical parameters/leakage source breakdown voltage: -30.0 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): -8.80 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4435BDY
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FAIRCHILD SEMICONDUCTOR SI4435DY. 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
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SI4435DY
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FAIRCHILD SEMICONDUCTOR SI4435DY. 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
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Vishay Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR SI4435DY. 晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
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