Technical parameters/frequency: 164MHz ~ 192MHz,274MHz ~ 320MHz,410MHz ~ 480MHz,820MHz ~ 960MHz
Technical parameters/FLASH memory capacity: 0 B
Technical parameters/output power: 16 dBm
Technical parameters/standby current: 300 nA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 2V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 2 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 32
Encapsulation parameters/Encapsulation: VQFN-32
External dimensions/length: 5.15 mm
External dimensions/width: 5.15 mm
External dimensions/height: 0.95 mm
External dimensions/packaging: VQFN-32
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Residential/Building Automation, Industrial Control and Monitoring
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CC1175RHBR
|
TI | 完全替代 | VQFN-32 |
高性能射频发射窄带系统 High Performance RF Transmitter for Narrowband Systems
|
||
CC1175RHBR
|
TI | 完全替代 | VQFN-32 |
高性能射频发射窄带系统 High Performance RF Transmitter for Narrowband Systems
|
||
CC1175RHMR
|
TI | 完全替代 | VQFN-32 |
高性能射频发射窄带系统 High Performance RF Transmitter for Narrowband Systems
|
||
CC1175RHMT
|
TI | 完全替代 | VQFN-32 |
高性能射频发射窄带系统 High Performance RF Transmitter for Narrowband Systems
|
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