Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/packaging: SOT-323
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJX4006RTF
|
Fairchild | 功能相似 | SOT-323-3 |
PNP外延硅晶体管与偏置电阻 PNP Epitaxial Silicon Transistor with Bias Resistor
|
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