Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 238 mA
Technical parameters/drain source resistance: 2.20 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±10.0 V
Technical parameters/Continuous drain current (Ids): 238 mA
Technical parameters/rise time: 15.0 ns
Technical parameters/Input capacitance (Ciss): 20pF @5V(Vds)
Technical parameters/rated power (Max): 300 mW
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-416
External dimensions/packaging: SOT-416
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
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