Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-4
External dimensions/packaging: SMD-4
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Raytheon | 功能相似 |
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
|
|||
2N2907A
|
NTE Electronics | 功能相似 | 3 |
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
|
||
2N2907A
|
Micro Commercial Components | 功能相似 | TO-206 |
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
|
||
2N2907A
|
Diotec Semiconductor | 功能相似 | TO-92 |
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
|
||
|
|
ON Semiconductor | 功能相似 | CASE 206AA-01 |
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
|
||
2N2907A
|
ST Microelectronics | 功能相似 | TO-18 |
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
|
||
2N2907A
|
Microsemi | 功能相似 | TO-18-3 |
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
|
||
2N2907A
|
KEC | 功能相似 |
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
|
|||
2N2907A
|
Taitron | 功能相似 |
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
|
|||
2N2907A
|
Central Semiconductor | 功能相似 | TO-18 |
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
|
||
|
|
Microsemi | 类似代替 | TO-18-3 |
抗辐射 RADIATION HARDENED
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review