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Model 1PMT33AT3
Description Zener Transient Voltage Suppressor POWERMITE Package
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Brand: ON Semiconductor
Packaging DO-216AA
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4360) Minimum order quantity(1)
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Technical parameters/peak pulse power: 1000 W

Technical parameters/minimum reverse breakdown voltage: 36.7 V

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: DO-216AA

External dimensions/packaging: DO-216AA

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: General

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
1PMT33AT1 1PMT33AT1 ON Semiconductor 完全替代 DO-216AA
齐纳瞬态电压抑制器POWERMITE套餐 Zener Transient Voltage Suppressor POWERMITE Package
PDF
1PMT33AT3G 1PMT33AT3G ON Semiconductor 完全替代 DO-216AA
POWERMITE® 封装 1PMT5.0AT1G/T3G 系列设计用于保护电压敏感组件，以抵抗高电压和高能量瞬变。 极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：200W @ 1 ms (1PMT5.0A − 1PMT36A) 最高钳位电压 @ 峰值脉冲电流 低泄漏 响应时间通常为 3 类 ESD 等级> (16kV)/个人体模型 薄型 - 最大高度 1.1mm 整体式散热片/锁定插片 全金属底部,可消除通量截留 小体积 - 占用面积 8.45mm POWERMITE 在 JEDEC 注册为 DO-216AA ### 瞬态电压抑制器，On Semiconductor
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