Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 330W (Tc)
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 174A
Technical parameters/Input capacitance (Ciss): 5480pF @25V(Vds)
Technical parameters/dissipated power (Max): 330W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: SUPER-220
External dimensions/packaging: SUPER-220
Physical parameters/operating temperature: -40℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBA1405PPBF
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Infineon | 功能相似 | TO-273-3 |
HEXFET® N 通道功率 MOSFET 超过 55A,Infineon ### MOSFET 晶体管,Infineon (IR) ### MOSFET 晶体管,Infineon Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
|
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IRFBA1405PPBF
|
International Rectifier | 功能相似 | TO-273-3 |
HEXFET® N 通道功率 MOSFET 超过 55A,Infineon ### MOSFET 晶体管,Infineon (IR) ### MOSFET 晶体管,Infineon Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
|
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