Technical parameters/rise/fall time: 75ns, 55ns
Technical parameters/output voltage: 20.0 V
Technical parameters/number of channels: 1
Technical parameters/forward voltage: 1.5 V
Technical parameters/input current: 18.0 mA
Technical parameters/dissipated power: 300 mW
Technical parameters/rise time: 75 ns
Technical parameters/isolation voltage: 5000 Vrms
Technical parameters/forward current: 25 mA
Technical parameters/forward voltage (Max): 1.8 V
Technical parameters/forward current (Max): 25 mA
Technical parameters/descent time: 55 ns
Technical parameters/descent time (Max): 55 ns
Technical parameters/rise time (Max): 75 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -20 ℃
Technical parameters/dissipated power (Max): 300 mW
Technical parameters/power supply voltage: 10V ~ 20V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/length: 9.91 mm
External dimensions/width: 6.86 mm
External dimensions/height: 3.94 mm
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -20℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FOD3180TV
|
Fairchild | 类似代替 | DIP-8 |
FAIRCHILD SEMICONDUCTOR FOD3180TV 光电耦合器, DIP-8, 2A, MOSFET
|
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