Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 26 ns
Technical parameters/Input capacitance (Ciss): 375pF @10V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 37 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2 mm
External dimensions/width: 1.6 mm
External dimensions/height: 0.85 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RTR030P02TL
|
Ricoh | 功能相似 | TSMT |
ROHM RTR030P02TL 晶体管, MOSFET, 低电压, P沟道, 3.2 A, -20 V, 125 mohm, -4.5 V, -2 V
|
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