Technical parameters/breakdown voltage: 13.3 V
Technical parameters/number of channels: 1
Technical parameters/clamp voltage: 19.9 V
Technical parameters/peak pulse power: 200 W
Technical parameters/minimum reverse breakdown voltage: 13.3 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-219AB-2
External dimensions/height: 0.98 mm
External dimensions/packaging: DO-219AB-2
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMF12A-E3-18
|
VISHAY | 完全替代 | DO-219 |
ESD 抑制器/TVS 二极管 1000watt 12volt
|
||
SMF12A-HE3-08
|
Vishay Intertechnology | 类似代替 | DO-219AB |
ESD 抑制器/TVS 二极管 ESD PROTECTION DIODE SMF DO219-HE3
|
||
SMF12A-HE3-08
|
VISHAY | 类似代替 | DO-219AB |
ESD 抑制器/TVS 二极管 ESD PROTECTION DIODE SMF DO219-HE3
|
||
SMF12A-M3-18
|
Vishay Semiconductor | 完全替代 | DO-219AB-2 |
ESD 抑制器/TVS 二极管 ESD PROTECTION DIODE SMF DO219-M3
|
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