Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): 20V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): 12V
Other/Collector Continuous Output Current (IC): 100mA/0.1A
Other/Cut off Frequency fTTransmission Frequency (fT): 7GHz
Other/DC current gain hFEDC Current Gain (hFE): 80~160
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: 10V
Other/dissipated power PcPower Dissipation: 200mW/0.2W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC3356
|
UTC | 功能相似 | SOT-23 |
2SC3356 NPN三极管 20V 100mA/0.1A 7GHz 80~160 10V SOT-23/SC-59 marking/标记 R24 微波低噪声放大器
|
||
|
|
YONGYUTAI | 功能相似 | SOT-23 |
2SC3356 NPN三极管 20V 100mA/0.1A 7GHz 80~160 10V SOT-23/SC-59 marking/标记 R24 微波低噪声放大器
|
||
2SC3356
|
Renesas Electronics | 功能相似 |
2SC3356 NPN三极管 20V 100mA/0.1A 7GHz 80~160 10V SOT-23/SC-59 marking/标记 R24 微波低噪声放大器
|
|||
2SC3356
|
NEC | 功能相似 | SOT-23 |
2SC3356 NPN三极管 20V 100mA/0.1A 7GHz 80~160 10V SOT-23/SC-59 marking/标记 R24 微波低噪声放大器
|
||
2SC3356-T1B-A
|
Renesas Electronics | 功能相似 | Mini-Mold |
NPN硅晶体管RF NPN Silicon RF Transistor
|
||
BFR193T
|
Infineon | 功能相似 | SC-75 |
硅NPN平面RF晶体管 Silicon NPN Planar RF Transistor
|
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