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Model HUF76423P3
Description UltraFET® MOSFET，Fairchild Semiconductor UItraFET® Trench MOSFET Combining the characteristics of achieving benchmark efficiency in power conversion applications. This device can withstand high energy in avalanche mode, and the diode exhibits very short reverse recovery time and accumulated charge. Optimized for high frequency efficiency, minimum RDS (on), low ESR, low total gate charge, and Miller gate charge. Applications: High frequency DC-DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
4.81  yuan 4.81yuan
5+:
$ 6.4976
25+:
$ 6.0163
50+:
$ 5.6793
100+:
$ 5.5350
500+:
$ 5.4387
2500+:
$ 5.3184
5000+:
$ 5.2702
10000+:
$ 5.1980
Quantity
5+
25+
50+
100+
500+
Price
$6.4976
$6.0163
$5.6793
$5.5350
$5.4387
Price $ 6.4976 $ 6.0163 $ 5.6793 $ 5.5350 $ 5.4387
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3142) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 33.0 A

Technical parameters/drain source resistance: 0.03 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 85 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/leakage source breakdown voltage: 60.0 V

Technical parameters/breakdown voltage of gate source: ±16.0 V

Technical parameters/Continuous drain current (Ids): 33.0 A

Technical parameters/rise time: 85 ns

Technical parameters/Input capacitance (Ciss): 1060pF @25V(Vds)

Technical parameters/rated power (Max): 85 W

Technical parameters/descent time: 76 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 85W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.67 mm

External dimensions/width: 4.7 mm

External dimensions/height: 16.3 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP45NF06 STP45NF06 ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP45NF06 晶体管, MOSFET, N沟道, 26 A, 60 V, 28 mohm, 10 V, 3 V
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