Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/drain source resistance: 300 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/leakage source breakdown voltage: 50.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 2.00 A
Technical parameters/Input capacitance (Ciss): 330pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7103PBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRF7103PBF 双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 130 mohm, 10 V, 3 V
|
||
MMDF1N05ER2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
ON SEMICONDUCTOR MMDF1N05ER2G 双路场效应管, MOSFET, 双N沟道, 2 A, 50 V, 0.3 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review