Technical parameters/forward voltage: 950 mV
Technical parameters/reverse recovery time: 35 ns
Technical parameters/forward current: 1 A
Technical parameters/Maximum forward surge current (Ifsm): 30 A
Technical parameters/forward voltage (Max): 950 mV
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/working junction temperature (Max): 125 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-41-2
External dimensions/packaging: DO-41-2
Physical parameters/operating temperature: -65℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Military and Aerospace, Aerospace, Defence, Military, Defense
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standards/military grade: Yes
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N4935G
|
ON Semiconductor | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4935G 快速恢复功率整流器
|
||
1N4935G
|
Leshan Radio | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4935G 快速恢复功率整流器
|
||
1N4935G
|
Vishay Semiconductor | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4935G 快速恢复功率整流器
|
||
|
1N4935G
|
Good-Ark Electronics | 功能相似 | DO-204AL |
ON SEMICONDUCTOR 1N4935G 快速恢复功率整流器
|
||
|
|
YANGJIE | 类似代替 | DO-41 |
TAIWAN SEMICONDUCTOR SF14G 快速/超快二极管, 单, 200 V, 1 A, 950 mV, 35 ns, 30 A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review