Technical parameters/power supply voltage (DC): 3.30 V, 3.60 V (max)
Technical parameters/clock frequency: 133MHz (max)
Technical parameters/access time: 133 µs
Technical parameters/memory capacity: 4500000 B
Technical parameters/power supply voltage: 3.135V ~ 3.6V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 100
Encapsulation parameters/Encapsulation: TQFP-100
External dimensions/packaging: TQFP-100
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CY7C1352F-200AC
|
Cypress Semiconductor | 完全替代 | QFP |
4兆位（ 256Kx18 ）流水线SRAM与NoBL⑩架构 4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Architecture
|
||
CY7C1352G-133AXC
|
Cypress Semiconductor | 类似代替 | TQFP-100 |
SRAM，Cypress Semiconductor ### SRAM（静态随机存取存储器）
|
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