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Model FDP8874
Description PowerTrench® N Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor # # MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.51  yuan 4.51yuan
5+:
$ 6.0845
25+:
$ 5.6338
50+:
$ 5.3183
100+:
$ 5.1831
500+:
$ 5.0929
2500+:
$ 4.9802
5000+:
$ 4.9352
10000+:
$ 4.8676
Quantity
5+
25+
50+
100+
500+
Price
$6.0845
$5.6338
$5.3183
$5.1831
$5.0929
Price $ 6.0845 $ 5.6338 $ 5.3183 $ 5.1831 $ 5.0929
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2336) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 30.0 V

Technical parameters/rated current: 121 A

Technical parameters/drain source resistance: 3.60 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 110 W

Technical parameters/input capacitance: 3.13 nF

Technical parameters/gate charge: 56.0 nC

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 114 A

Technical parameters/rise time: 128 ns

Technical parameters/Input capacitance (Ciss): 3130pF @15V(Vds)

Technical parameters/rated power (Max): 110 W

Technical parameters/descent time: 31 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 110 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.67 mm

External dimensions/width: 4.83 mm

External dimensions/height: 9.4 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDP8874 FDP8874 ON Semiconductor 类似代替 TO-220-3
PowerTrench® N 通道 MOSFET，10A 至 19.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
PDF
FDP8874 FDP8874 Fairchild 类似代替 TO-220-3
PowerTrench® N 通道 MOSFET，10A 至 19.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
PDF

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